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Влияние фокусировки фононов на теплопроводность гетероструктур GaAs/AlGaAs при низких температурах
Author(s) -
И.И. Кулеев
Publication year - 2019
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2019.03.47231.271
Subject(s) - phonon , anisotropy , thermal conductivity , condensed matter physics , specular reflection , heterojunction , materials science , knudsen number , reflection (computer programming) , boltzmann equation , conductivity , chemistry , optics , physics , composite material , thermodynamics , computer science , programming language
The effect of the anisotropy of elastic properties on the thermal conductivity of GaAs/AlGaAs heterostructures at low temperatures is investigated. The effect of phonon focusing on the anisotropy of the thermal conductivity is analyzed. The parameters of the specular reflection of phonons from the boundaries of the heterostructures, which characterize the heat flux in the Knudsen mode of the phonon gas flow, are determined. The angular dependences of the mean free paths of phonons of different polarizations, which determine the thermal conductivity anisotropy of heterostructures with orientations {100} and {110}, are calculated.

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