Open AccessОбразование дислокационных пар в гетероструктуре Ge/GeSi/Si(001)
Author(s) -
Ю.Б. Болховитянов,
А. К. Гутаковский,
А.И. Дерябин,
Л. В. Соколов
Publication year - 2019
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2019.02.47127.139
Subject(s) - dislocation , burgers vector , heterojunction , materials science , enhanced data rates for gsm evolution , condensed matter physics , partial dislocations , layer (electronics) , relaxation (psychology) , crystallography , optoelectronics , nanotechnology , composite material , chemistry , physics , computer science , psychology , telecommunications , social psychology
In the Ge/LTGe/GeSi/Si(001) heterostructures, the GeSi buffer layer remains pseudomorphic in a certain range of the heterostructure parameters and growth regimes, while the Ge film is completely relaxed owing to the edge dislocation network at the Ge/GeSi interface. It has been experimentally shown that, along with edge dislocations, dislocations with the Burgers vectors of the a _0〈100〉-type form. Their formation is caused by the reaction of 60° dislocations with a unidirectional screw component. In this case, if during the buffer layer relaxation the edge dislocations split with the formation of an edge-type dislocation complex, in which the 60° dislocations remained bound, the dislocations with the Burgers vectors a _0〈001〉 split into two independent 60° dislocations.