Увлечение электронов в полупроводниковой наноструктуре потоком нейтральных частиц | Zendy

С.В. Ганцевич | Zendy; В.Л. Гуревич | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Увлечение электронов в полупроводниковой наноструктуре потоком нейтральных частиц

Author(s) -

С.В. Ганцевич,

В.Л. Гуревич

Publication year - 2018

Publication title -

физика твердого тела

Language(s) - English

Resource type - Journals

eISSN - 1726-7498

pISSN - 0367-3294

DOI - 10.21883/ftt.2019.01.46909.220

Subject(s) - entrainment (biomusicology) , electron , ion , nanostructure , semiconductor , physics , atomic physics , mechanics , nanotechnology , materials science , optoelectronics , nuclear physics , quantum mechanics , rhythm , acoustics

The entrainment of current carriers (electrons) in a two-dimensional semiconductor nanostructure by a flow of neutral particles (atoms or molecules) moving near its surface is considered. It is shown that the physical mechanism is similar to the entrainment of electrons with an ion beam inquantum wires, considered earlier in the works of V.L. Gurevich and M.I. Muradov.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research