Open AccessУвлечение электронов в полупроводниковой наноструктуре потоком нейтральных частиц
Author(s) -
С.В. Ганцевич,
В.Л. Гуревич
Publication year - 2019
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2019.01.46909.220
Subject(s) - entrainment (biomusicology) , electron , ion , nanostructure , semiconductor , physics , atomic physics , mechanics , nanotechnology , materials science , optoelectronics , nuclear physics , quantum mechanics , rhythm , acoustics
The entrainment of current carriers (electrons) in a two-dimensional semiconductor nanostructure by a flow of neutral particles (atoms or molecules) moving near its surface is considered. It is shown that the physical mechanism is similar to the entrainment of electrons with an ion beam inquantum wires, considered earlier in the works of V.L. Gurevich and M.I. Muradov.