Open AccessПолевой эффект при формировании интерфейса однослойного графена с водой
Author(s) -
А.В. Бутко,
В.Ю. Бутко,
С.П. Лебедев,
А.А. Лебедев,
Ю.А. Кумзеров
Publication year - 2018
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2018.12.46742.148
Subject(s) - graphene , materials science , silicon carbide , field effect , monolayer , field effect transistor , nanotechnology , electrical resistivity and conductivity , silicon , transistor , optoelectronics , composite material , electrical engineering , voltage , engineering
Establishing the features of interfacial effects on the electrical conductivity of graphene is crucial for successful design of novel graphene-based electronic devices, including chemical sensors and biosensors. We study electrical properties of monolayer graphene, prepared by thermal decomposition of silicon carbide in argon, in the field-effect transistor and the four-probe geometries. Alterations in the electrical properties of graphene in response to placing a quantity of water on its surface followed by removal of the water are investigated. In these geometries, the field effect is shown to play a key role in the way the electrical properties of graphene are affected by the formation of the graphene–water interface.