Open AccessBasic requirements of spin-flip Raman scattering on excitonic resonances and its modulation through additional high-energy illumination in semiconductor heterostructures
Author(s) -
J. Debus,
D. Kudlacik,
V. F. Sapega,
Т. С. Шамирзаев,
D. G. Yakovlev,
D. Reuter,
Andreas D. Wieck,
A. Waag,
М. Bayer
Publication year - 2018
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2018.08.46250.14gr
Subject(s) - raman scattering , spin flip , semiconductor , scattering , heterojunction , spin (aerodynamics) , condensed matter physics , x ray raman scattering , materials science , quantum well , atomic physics , excited state , optoelectronics , physics , laser , raman spectroscopy , optics , thermodynamics
We describe the major requirements to experimentally perform and observe resonant spin-flip Raman scattering on excitonic resonances in low-dimensional semiconductors. We characterize in detail the properties of this resonant light scattering technique and evaluate the criteria, which must be fulfilled by the experimental setup and the semiconductor sample studied to be able to observe a spin-flip scattering process. We also demonstrate the influence of additional unpolarized laser illumination with energies, which exceed considerably the band gap energy of the semiconductor nanostructure under study, on the resonantly excited electron spin-flip scattering in InAs-based quantum dot ensembles as well as on the paramagnetic Mn-ion spin-flip in (Zn,Mn)Se/(Zn,Be)Se quantum wells.