Open AccessInterfacial ferromagnetism in a Co/CdTe ferromagnet/semiconductor quantum well hybrid structure
Author(s) -
Ina V. Kalitukha,
M. Salewski,
И. А. Акимов,
V. L. Korenev,
V. F. Sapega,
D. G. Yakovlev,
G. Karczewski,
M. Wiater,
T. Wójtowicz,
Yu. G. Kusrayev,
Maximiliano Bayer
Publication year - 2018
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2018.08.46243.15gr
Subject(s) - ferromagnetism , magnetization , condensed matter physics , materials science , quantum well , magnetic semiconductor , ferromagnetic material properties , semiconductor , cadmium telluride photovoltaics , magnetic field , optoelectronics , physics , optics , laser , quantum mechanics
The magnetization properties of a ferromagnet-semiconductor Co/CdMgTe/CdTe quantum well hybrid structure are investigated by several techniques. Exploiting the proximity effect between acceptor bound holes and magnetic ions we detect the magnetization curves by measuring the circular polarization of photoluminescence in an out-of-plane magnetic field. We show that magnetization originates from interfacial ferromagnet on Co-CdMgTe interface and the proximity effect is caused by magnetization of interfacial Co-CdMgTe ferromagnetic layer whose magnetic properties are very different from Co.