Open AccessЭнергетическая структура одиночного акцептора Mn в GaAs : Mn
Author(s) -
G. S. Dimitriev,
V. F. Sapega,
Н. С. Аверкиев,
J. Debus,
E. Lähderanta,
I. V. Krainov
Publication year - 2018
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2018.08.46242.22gr
Subject(s) - acceptor , exciton , raman scattering , raman spectroscopy , excited state , condensed matter physics , valence (chemistry) , excitation , materials science , manganese , chemistry , atomic physics , physics , optics , metallurgy , organic chemistry , quantum mechanics
The energy structure of the Mn acceptor, which is a complex of Mn^2+ ion plus valence band hole, is investigated in the external magnetic field and under presence of an uniaxial stress has been studied. The spin-flip Raman spectra are studied under resonant excitation of exciton bound to the Mn acceptor. The gfactors of the ground F = 1 and the first excited F = 2 states are determined and selection rules for the optical transitions between the acceptor states are described. The value of the random field (stress or electric field) acting on manganese acceptor and the deformation potential for the exchange interaction constant of the Mn^2+ + hole complex are obtained. A theoretical model is developed that takes into account the influence of random internal and uniaxial external stress and magnetic field. The proposed model describes well the lines of spin-flip Raman scattering of Mn acceptor.