Open AccessИнтеркалирование графена, сформированного на карбиде кремния, атомами железа
Author(s) -
М.В. Гомоюнова,
Г.С. Гребенюк,
В.Ю. Давыдов,
И.А. Ермаков,
И.А. Елисеев,
А.А. Лебедев,
С.П. Лебедев,
Е.Ю. Лобанова,
А.Н. Смирнов,
Д.А. Смирнов,
И.И. Пронин
Publication year - 2018
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2018.07.46134.036
Subject(s) - intercalation (chemistry) , x ray photoelectron spectroscopy , materials science , graphene , silicon , synchrotron radiation , monolayer , layer (electronics) , analytical chemistry (journal) , silicon carbide , carbon fibers , spectroscopy , electron diffraction , absorption (acoustics) , diffraction , chemical engineering , chemistry , nanotechnology , inorganic chemistry , metallurgy , optics , composite material , physics , chromatography , quantum mechanics , composite number , engineering
The intercalation of iron under a graphene monolayer grown on 4 H -SiC(0001) is studied. The experiments have been carried out in situ under conditions of ultrahigh vacuum by low-energy electron diffraction, high-energy-resolution photoelectron spectroscopy using synchrotron radiation, and near carbon K -edge X-ray absorption spectroscopy. The deposited iron film thicknesses have been varied within 0.1–2 nm and the sample temperatures from room temperature to 700°C. It is shown that the intercalation process begins at temperatures higher than ~350°C. In this case, it is found that intercalated iron atoms are localized not only between graphene and a buffer layer coating SiC, but also under the buffer layer itself. The optimal conditions of the intercalation are realized in the range 400–500°C, because, at higher temperatures, the system becomes unstable due to the chemical interaction of the intercalated iron with silicon carbide. The inertness of the intercalated films to action of oxygen is demonstrated.