Open AccessВлияние висмута на структурное совершенство и люминесцентные свойства тонкопленочных упругонапряженных гетероструктур Al-=SUB=-x-=/SUB=-In-=SUB=-y-=/SUB=-Ga-=SUB=-1-x-y-=/SUB=-Bi-=SUB=-z-=/SUB=-Sb-=SUB=-1-z-=/SUB=-/GaSb
Author(s) -
Д. Л. Алфимова,
М. Л. Лунина,
Л. С. Лунин,
А. С. Пащенко,
A. E. Kazakova
Publication year - 2018
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2018.07.46109.194
Subject(s) - bismuth , materials science , epitaxy , heterojunction , atmospheric temperature range , analytical chemistry (journal) , crystallography , chemistry , metallurgy , nanotechnology , thermodynamics , physics , optoelectronics , layer (electronics) , chromatography
The effect of bismuth on the structural perfection and the luminescent properties of Al_ x In_ y Ga_1– x – y Bi_ z Sb_1– z /GaSb heterostructures has been studied. The optimal parameters of the process of zone recrystallization with temperature gradient at which epitaxial AlInGaBiSb layers have the minimum roughness and high structural perfection have been revealed: temperature gradient 1 ≤ G ≤ 30 K/cm, the liquid zone thickness 60 ≤ l ≤ 100 μm, the temperature range 773 K ≤ T ≤ 873 K, and bismuth concentration 0.3–0.4 mol fraction.