Open AccessОптические спектры кристаллов GaSe и GaS различной толщины
Author(s) -
В.Ф. Агекян,
А.Ю. Серов,
Н.Г. Философов
Publication year - 2018
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2018.06.46002.348
Subject(s) - exciton , binding energy , spectral line , materials science , stratification (seeds) , condensed matter physics , atomic physics , molecular physics , chemistry , physics , seed dormancy , germination , botany , astronomy , dormancy , biology
The transmission spectra of GaSe and GaS crystals of different thicknesses prepared by mechanical stratification of bulk crystals have been investigated. The quantum-size shifts of exciton resonances in thin GaSe samples are as high as 12 meV, which is close to the exciton binding energy. The high-energy interband transitions in GaSe and GaS are observed near 3.4 and 3.7 eV, respectively.