Оптические спектры кристаллов GaSe и GaS различной толщины
Author(s) -
В.Ф. Агекян,
А.Ю. Серов,
Н.Г. Философов
Publication year - 2018
Publication title -
физика твердого тела
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2018.06.46002.348
Subject(s) - exciton , binding energy , spectral line , materials science , stratification (seeds) , condensed matter physics , atomic physics , molecular physics , chemistry , physics , seed dormancy , germination , botany , astronomy , dormancy , biology
The transmission spectra of GaSe and GaS crystals of different thicknesses prepared by mechanical stratification of bulk crystals have been investigated. The quantum-size shifts of exciton resonances in thin GaSe samples are as high as 12 meV, which is close to the exciton binding energy. The high-energy interband transitions in GaSe and GaS are observed near 3.4 and 3.7 eV, respectively.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom