Open AccessОднофотонное излучение квантовых точек InAs/AlGaAs
Author(s) -
M. V. Rakhlin,
К.Г. Беляев,
G. V. Klimko,
I. S. Mukhin,
С. В. Иванов,
А. А. Торопов
Publication year - 2018
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2018.04.45675.310
Subject(s) - heterojunction , molecular beam epitaxy , quantum dot , materials science , optoelectronics , photoluminescence , spectroscopy , epitaxy , radiation , optics , nanotechnology , physics , layer (electronics) , quantum mechanics
The results of investigation of the radiative characteristics of heterostructures with InAs/AlGaAs quantum dots (QDs) grown by molecular beam epitaxy have been presented. The properties of single QDs were determined by spectroscopy of micro-photoluminescence in cylindrical mesa-structures with a diameter of 200–1000 nm or columnar microresonators with distributed Bragg mirrors. The single-photon nature of the radiation is confirmed by measurements and analysis of the second-order correlation function g ^2(τ) in a wide spectral range from 630 to 730 nm.