Однофотонное излучение квантовых точек InAs/AlGaAs | Zendy

M. V. Rakhlin | Zendy; К.Г. Беляев | Zendy; G. V. Klimko | Zendy; Ivan S. Mukhin | Zendy; С. В. Иванов | Zendy; А. А. Торопов | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Однофотонное излучение квантовых точек InAs/AlGaAs

Author(s) -

M. V. Rakhlin,

К.Г. Беляев,

G. V. Klimko,

Ivan S. Mukhin,

С. В. Иванов,

А. А. Торопов

Publication year - 2018

Publication title -

физика твердого тела

Language(s) - English

Resource type - Journals

eISSN - 1726-7498

pISSN - 0367-3294

DOI - 10.21883/ftt.2018.04.45675.310

Subject(s) - heterojunction , molecular beam epitaxy , quantum dot , materials science , optoelectronics , photoluminescence , spectroscopy , epitaxy , radiation , optics , nanotechnology , physics , layer (electronics) , quantum mechanics

The results of investigation of the radiative characteristics of heterostructures with InAs/AlGaAs quantum dots (QDs) grown by molecular beam epitaxy have been presented. The properties of single QDs were determined by spectroscopy of micro-photoluminescence in cylindrical mesa-structures with a diameter of 200–1000 nm or columnar microresonators with distributed Bragg mirrors. The single-photon nature of the radiation is confirmed by measurements and analysis of the second-order correlation function g ^2(τ) in a wide spectral range from 630 to 730 nm.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research