Open AccessЗакон дисперсии экситон-поляритонов в условиях действия сильной накачки в области M-полосы люминесценции
Author(s) -
П.И. Хаджи,
Л.Ю. Надькин,
Д.А. Марков
Publication year - 2018
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2018.04.45671.224
Subject(s) - exciton , dispersion (optics) , biexciton , pulse (music) , condensed matter physics , semiconductor , photon , coupling (piping) , action (physics) , physics , atomic physics , luminescence , materials science , quantum mechanics , optics , voltage , metallurgy
The double-pulse interaction with excitons and biexcitons in semiconductors is studied theoretically. It is shown that the dispersion law of carrier wave has three branches under the action of a powerful pumping in the region of the M -band of luminescence. Values of parameters at which the dispersion law branches can intersect due to the degeneration of the exciton level energy have been found. The effect of a significant change in the force of coupling between the exciton and photon of a weak pulse with a change in the pumping intensity is predicted.