Закон дисперсии экситон-поляритонов в условиях действия сильной накачки в области M-полосы люминесценции | Zendy

П.И. Хаджи | Zendy; Л.Ю. Надькин | Zendy; Д.А. Марков | Zendy

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Закон дисперсии экситон-поляритонов в условиях действия сильной накачки в области M-полосы люминесценции

Author(s) -

П.И. Хаджи,

Л.Ю. Надькин,

Д.А. Марков

Publication year - 2018

Publication title -

физика твердого тела

Language(s) - English

Resource type - Journals

eISSN - 1726-7498

pISSN - 0367-3294

DOI - 10.21883/ftt.2018.04.45671.224

Subject(s) - exciton , dispersion (optics) , biexciton , pulse (music) , condensed matter physics , semiconductor , photon , coupling (piping) , action (physics) , physics , atomic physics , luminescence , materials science , quantum mechanics , optics , voltage , metallurgy

The double-pulse interaction with excitons and biexcitons in semiconductors is studied theoretically. It is shown that the dispersion law of carrier wave has three branches under the action of a powerful pumping in the region of the M -band of luminescence. Values of parameters at which the dispersion law branches can intersect due to the degeneration of the exciton level energy have been found. The effect of a significant change in the force of coupling between the exciton and photon of a weak pulse with a change in the pumping intensity is predicted.

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