Open AccessАкцепторы III группы с мелкими и глубокими уровнями в карбиде кремния: исследования методами ЭПР и ДЭЯР
Author(s) -
I. V. Il'in,
И. А. Успенская,
D. D. Kramushchenko,
M. V. Muzafarova,
V. A. Soltamov,
Е. Н. Мохов,
Pavel V. Baranov
Publication year - 2018
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2018.04.45670.211
Subject(s) - orthorhombic crystal system , electron paramagnetic resonance , resonance (particle physics) , materials science , symmetry (geometry) , silicon , nuclear magnetic resonance , condensed matter physics , crystallography , chemistry , molecular physics , physics , atomic physics , crystal structure , mathematics , geometry , metallurgy
AbstractResults of investigations of Group III acceptors (B, Al, and Ga) in crystals of silicon carbide using the most informative electron spin resonance and electron nuclear double resonance methods are presented. Structural models of the acceptors with shallow and deep levels are considered. In addition to the data obtained earlier, studies using high-frequency magnetic resonance were obtained, which allowed revealing orthorhombic deviations from the axial symmetry for the deep acceptors; theoretical analysis explains experimentally found shifts of g factors for the deep acceptors arising due to the orthorhombic deviations, which appear probably due to the Jahn–Teller effect.