Open AccessЭпитаксиальный рост пленок селенида кадмия на кремнии с буферным слоем карбида кремния
Author(s) -
В.В. Антипов,
С.А. Кукушкин,
А.В. Осипов,
В.П. Рубец
Publication year - 2018
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2018.03.45552.275
Subject(s) - materials science , raman spectroscopy , silicon , cadmium selenide , substrate (aquarium) , layer (electronics) , evaporation , crystallite , amorphous solid , etching (microfabrication) , selenide , crystallography , selenium , nanotechnology , optoelectronics , optics , chemistry , metallurgy , quantum dot , oceanography , physics , geology , thermodynamics
An epitaxial cubic 350-nm-thick cadmium selenide has been grown on silicon for the first time by the method of evaporation and condensation in a quasi-closed volume. It is revealed that, in this method, the optimum substrate temperature is 590°C, the evaporator temperature is 660°C, and the growth time is 2 s. To avoid silicon etching by selenium with formation of amorphous SiSe_2, a high-quality ~100-nm-thick buffer silicon carbide layer has been synthesized on the silicon surface by substituting atoms. The powder diffraction pattern and the Raman spectrum unambiguously correspond to cubic cadmium selenide crystal. The ellipsometric, Raman, and electron diffraction analyses demonstrate high structural perfection of the cadmium selenide layer and the absence of a polycrystalline phase.