Open AccessДиэлектрические потери и перенос заряда в легированном сурьмой монокристалле TlGaS-=SUB=-2-=/SUB=-
Author(s) -
С.М. Асадов,
С.Н. Мустафаева
Publication year - 2018
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2018.03.45551.266
Subject(s) - antimony , dielectric , conductivity , doping , condensed matter physics , dispersion (optics) , materials science , dielectric loss , single crystal , fermi level , density of states , electrical resistivity and conductivity , analytical chemistry (journal) , optics , chemistry , physics , optoelectronics , crystallography , metallurgy , chromatography , quantum mechanics , electron
Effect of semimetallic antimony (0.5 mol % Sb) on the dielectric properties and ac-conductivity of TlGaS_2-based single crystals grown by the Bridgman–Stockbarger method has been studied. The experimental results on the frequency dispersion of dielectric coefficients and the conductivity of TlGa_0.995Sb_0.005S_2 single crystals allowed the revealing of the dielectric loss nature, the charge transfer mechanism, and the estimation of the parameters of the states localized in the energy gap. The antimony-doping of the TlGaS_2 single crystal leads to an increase in the density of states near the Fermi level and a decrease in the average time and average distance of hopes.