Open AccessСостояние топологического изолятора в тонких пленках висмута под воздействием плоскостной деформации растяжения
Author(s) -
Е.В. Демидов,
В.М. Грабов,
В. А. Комаров,
Н.С. Каблукова,
А.Н. Крушельницкий
Publication year - 2018
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2018.03.45543.07d
Subject(s) - bismuth , materials science , magnetoresistance , hall effect , condensed matter physics , topological insulator , mica , thin film , substrate (aquarium) , electrical resistivity and conductivity , thermal expansion , composite material , magnetic field , nanotechnology , metallurgy , physics , oceanography , quantum mechanics , geology
The results of experimental examination of galvanomagnetic properties of thin bismuth films subjected to plane tensile strain resulting from the difference in thermal expansion coefficients of the substrate material and bismuth are presented. The resistivity, the magnetoresistance, and the Hall coefficient were studied at temperatures ranging from 5 to 300 K in magnetic fields as strong as 0.65 T. Carrier densities were calculated. A considerable increase in carrier density in films thinner than 30 nm was observed. This suggests that surface states are more prominent in thin bismuth films on mica substrates, while the films themselves may exhibit the properties of a topological insulator.