Open AccessВзаимодействие атомов сурьмы с микропорами в кремнии
Author(s) -
В.Б. Оджаев,
А.Н. Петлицкий,
В.И. Плебанович,
П.К. Садовский,
М.И. Тарасик,
А.Р. Челядинский
Publication year - 2018
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2018.01.45283.123
Subject(s) - antimony , getter , silicon , materials science , annealing (glass) , diffusion , ion , metallurgy , layer (electronics) , optoelectronics , nanotechnology , chemistry , thermodynamics , physics , organic chemistry
The interaction between Sb atoms and micropores of a getter layer in silicon is studied. The getter layer was obtained via implantation of Sb^+ ions into silicon and subsequent heat treatment processes. The antimony atoms located in the vicinity of micropores are captured by micropores during gettering annealing and lose its electrical activity. The activation energy of capture process to the pores for antimony is lower than that of antimony diffusion in silicon deformation fields around microvoids on the diffusion process.