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Определение толщины зародышевого слоя AlN, сформированного на поверхности Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-(0001) в процессе нитридизации, методами РФЭС и ИК-спектроскопии
Author(s) -
Д.С. Милахин,
Т.В. Малин,
В.Г. Мансуров,
А.С. Кожухов,
Н.Н. Новикова,
В.А. Яковлев,
К.С. Журавлев
Publication year - 2022
Publication title -
физика и техника полупроводников
Language(s) - Russian
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2022.08.53137.23
Subject(s) - nucleation , sapphire , materials science , crystallite , x ray photoelectron spectroscopy , layer (electronics) , monolayer , spectroscopy , crystallography , analytical chemistry (journal) , infrared spectroscopy , chemical engineering , chemistry , nanotechnology , optics , metallurgy , organic chemistry , chromatography , quantum mechanics , laser , physics , engineering

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