Open AccessIrradiation of Cu(In, Ga)Se-=SUB=-2-=/SUB=- Thin Films by 10 MeV Electrons at 77 K: Effect on Photoluminescence Spectra
Author(s) -
М. А. Сулимов,
М. Н. Сарычев,
I. A. Mogilnikov,
Vladimir Ivanov,
В. А. Волков,
V. D. Zhivulko,
А. В. Мудрый,
M. V. Yakushev
Publication year - 2022
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2022.06.52617.9841a
Subject(s) - photoluminescence , irradiation , materials science , electron , spectral line , recombination , thin film , electron beam processing , analytical chemistry (journal) , atomic physics , optoelectronics , chemistry , physics , nanotechnology , biochemistry , chromatography , quantum mechanics , astronomy , nuclear physics , gene
Thin films of Cu(In,Ga)Se2 on Mo/glass were irradiated by 10 MeV electrons at 77 K and examined by photoluminescence at 77 K before and after irradiation without warming the samples as well as after warming to 300 K. The photoluminescence spectra revealed a broad band constituting 3 merged peaks (P1, P2, P3) assigned to: band-to-band recombination (P1) and recombination of free electrons with holes localised at acceptors influenced by the valence band tail (P2, P3). Irradiation reduced the intensity of the peaks due to deep traps generated by electrons and anomalously reduced the degree of compensation of the material. Keywords: thin films, irradiation, photoluminescence, recombination, band-to-band.