Open AccessSynchrotron radiation photoemission study of the electronic structure of the ultrathin K/AlN interface
Author(s) -
G. V. Benemanskaya,
S.N. Timoshnev,
G. N. Iluridze,
T. A. Minashvili
Publication year - 2022
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2022.06.52616.9821a
Subject(s) - x ray photoelectron spectroscopy , electronic structure , synchrotron radiation , materials science , photoemission spectroscopy , nitride , surface states , valence (chemistry) , adsorption , metal , analytical chemistry (journal) , atomic physics , chemistry , surface (topology) , nanotechnology , nuclear magnetic resonance , layer (electronics) , computational chemistry , physics , geometry , mathematics , organic chemistry , chromatography , quantum mechanics , metallurgy
The electronic structure of the clean AlN surface and the ultrathin K/AlN interface has been studied in situ by synchrotron-based photoelectron spectroscopy using the photon energies in the range of 100-650 eV. The effect of K adsorption was studied. Changes in the valence band and in the Al 2p, N 1s, and K 3p core levels spectra have been investigated using K submonolayer deposition. Modification of the surface electronic structure of the AlN caused by K adsorption is found to originate from the local interaction of N surface atoms and K adatoms. As a results the suppression of intrinsic surface state and appearance of a new induced state are observed. It was found the K-induced electron redistribution effect that causes the positive energy shift of N 1s surface peak and increasing N-ionicity. Keywords: III-nitrides, electronic structure, surface states, metal-III-nitride interfaces, photoelectron spectroscopy.