Open AccessВлияние низкой температуры на электрофизические и шумовые характеристики ультрафиолетовых светодиодов на основе структур с квантовыми ямами InGaN/GaN
Author(s) -
А.М. Иванов,
А.В. Клочков
Publication year - 2022
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2022.06.52596.9817
Subject(s) - optoelectronics , materials science , light emitting diode , noise (video) , nitrogen , quantum efficiency , noise power , radiative transfer , liquid nitrogen , power (physics) , optics , physics , thermodynamics , quantum mechanics , artificial intelligence , computer science , image (mathematics)
Comparison of optical power, external quantum efficiency in InGaN / GaN UV LEDs at room temperature and liquid nitrogen temperature is carried out. The spectral densities of the current low-frequency noise have been investigated. The mechanisms of carrier transport, the formation of low-frequency noise, and the dependences of the rates of radiative and nonradiative recombination at room and nitrogen temperatures are considered.