Open AccessРазмерный эффект в МОП-структурах при ионизирующем облучении
Author(s) -
O.B. Александров
Publication year - 2022
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2022.06.52595.9786
Subject(s) - hydrogen , diffusion , irradiation , ionizing radiation , poisson's equation , materials science , oxide , thermal , chemistry , atomic physics , thermodynamics , physics , nuclear physics , organic chemistry , quantum mechanics , metallurgy
A quantitative model of the dimensional effect —dependence of surface states on the gate size in MOS-structuressubjected to ionizing irradiation has been developed. It is assumedthat the dimensional effect is due to the exodus of hydrogenreleased from hydrogen-containing hole traps through the butt-ends of a two-dimensional MOS-structure. The effect is describedby a system of diffusion-kinetic equations solved together withthe Poisson equation. The influence of technological treatmentsand regimes of thermal oxidation on the magnitude of the effectis associated with different concentrations of hydrogen-containingtraps in the gate oxide. It is shown that the main contribution tothe effect is the accelerated by ionizing irradiation out-diffusion ofneutral hydrogen atoms.