Исследование кристаллической структуры, оптических и электрофизических свойств нового полупроводникового материала Cu-=SUB=-2-=/SUB=-CrSnS-=SUB=-4-=/SUB=- для тонкопленочных солнечных элементов

The Cu2CrSnS4 microcrystalline powders and films with orthorhombic structure were obtained by solid-phase synthesis, and their Raman spectra were recorded for the first time. By optical spectroscopy, it was found that their Eg = 1.70 eV, while in energy band gap of the powders there is a donor level with E = 1.23 eV. It is shown for the first time that films of this material are photosensitive and have p-type of dark conductivity.