
Исследование кристаллической структуры, оптических и электрофизических свойств нового полупроводникового материала Cu-=SUB=-2-=/SUB=-CrSnS-=SUB=-4-=/SUB=- для тонкопленочных солнечных элементов
Author(s) -
М.В. Гапанович,
И.Н. Один,
И.М. Левин,
В.В. Ракитин,
Д.М. Седловец,
Г.В. Шилов,
Д.В. Корчагин
Publication year - 2022
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2022.06.52594.9830
Subject(s) - raman spectroscopy , microcrystalline , orthorhombic crystal system , band gap , materials science , conductivity , optical conductivity , analytical chemistry (journal) , phase (matter) , solid solution , spectroscopy , crystallography , chemistry , optics , crystal structure , optoelectronics , metallurgy , physics , organic chemistry , chromatography , quantum mechanics
The Cu2CrSnS4 microcrystalline powders and films with orthorhombic structure were obtained by solid-phase synthesis, and their Raman spectra were recorded for the first time. By optical spectroscopy, it was found that their Eg = 1.70 eV, while in energy band gap of the powders there is a donor level with E = 1.23 eV. It is shown for the first time that films of this material are photosensitive and have p-type of dark conductivity.