Open AccessЭффективность возбуждения центров дислокационной люминесценции в кремнии с кислородными преципитатами
Author(s) -
Н.А. Соболев,
А.Е. Калядин,
К.Ф. Штельмах,
Е.И. Шек,
В.И. Сахаров,
И.Т. Серенков
Publication year - 2022
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2022.06.52585.9832
Subject(s) - photoluminescence , annealing (glass) , getter , materials science , luminescence , impurity , silicon , argon , dislocation , oxygen , analytical chemistry (journal) , optoelectronics , chemistry , metallurgy , composite material , organic chemistry , chromatography
Effect of the pump power on the photoluminescence intensity for dislocation-related luminescence centers is studied in p-type silicon containing oxygen precipitates. Oxygen precipitates are induced as a result of three-stage annealing used for formation of a getter for fast diffusing impurities in microelectronics technology while D1 and D2 dislocation-related luminescence centers were produced during subsequent annealing in a flow of argon at 1000°С. The photoluminescence excitation efficiencies for the D1 and D2 lines were measured at a temperature of liquid helium.