Open AccessФотоприемники на основе гетероструктур GaInAsSb/GaAlAsSb для практических задач прецизионной диодной лазерной спектроскопии
Author(s) -
Е.В. Куницына,
И.А. Андреев,
Г.Г. Коновалов,
А.А. Пивоварова,
Н.Д. Ильинская,
Ю.П. Яковлев,
Я.Я. Понуровский,
А.И. Надеждинский,
А.С. Кузьмичев,
Д.Б. Ставровский,
М.В. Спиридонов
Publication year - 2022
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2022.05.52355.9813
Subject(s) - photodetector , materials science , optoelectronics , monochromatic color , photodiode , diode , laser , sensitivity (control systems) , heterojunction , methane , optics , chemistry , physics , electronic engineering , engineering , organic chemistry
The paper considers the uncooled photodetectors based on GaInAsSb/GaAlAsSb heterostructures, which can be applied in precision diode laser spectroscopy. The spectral sensitivity range of photodetectors with a photosensitive area diameter of 1.0 mm and 2.0 mm is 1.0 − 2.4 µm. The current monochromatic sensitivity at the wavelength of 2.1 µm has a value of 1.0 A/W without bias. The capacity reaches 375 pF with a photosensitive area diameter of 1.0 mm and 800-5000 pF with 2 mm. The modern gas analyzers based on diode lasers and developed photodetectors for medical screening diagnostics by analyzing the gas compositions of exhaled air, for control of impurity gases in the process of rectification of inorganic hydrides, control of methane leaks in gas pipelines, as well as for registration of exhaust gases of a moving car are presented.