Open AccessОтжиг высоковольтных 4H-SiC диодов Шоттки, облученных электронами при высокой температуре
Author(s) -
А.А. Лебедев,
В.В. Козловский,
М.Е. Левинштейн,
Д.А. Малевский,
Г.А. Оганесян,
А.М. Стрельчук,
К.С. Давыдовская
Publication year - 2022
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2022.04.52201.9777
Subject(s) - irradiation , annealing (glass) , materials science , schottky diode , electron beam processing , silicon carbide , atmospheric temperature range , optoelectronics , analytical chemistry (journal) , diode , composite material , chemistry , nuclear physics , thermodynamics , physics , chromatography
The effect of annealing on the parameters of 4H-SiC Schottky diodes irradiated with electrons at high temperatures has been studied for the first time. The electron energy was 0.9 MeV. The irradiation was carried out at temperatures of 23, 300, and 500oС at fluences in the range 1×1016 – 1.3×1017 cm-2. The results of annealing after the irradiation at high temperatures are qualitatively different from the results of annealing after conventional irradiation at room temperature with the same fluencies. The results obtained indicate that the spectrum of radiation defects introduced into SiC under a high-temperature (“hot”) irradiation differs significantly from that of defects introduced by irradiation at room temperature. At irradiation temperatures of 300 and 500°C and large, the effect of "reverse annealing" was revealed, when the base resistance grows rather than falling as a result of annealing.