Open AccessСравнительное исследование фотоэлементов на основе кремния, легированного никелем различными методами
Author(s) -
К.А. Исмайлов,
Н.Ф. Зикриллаев,
С.В. Ковешников,
Е.Ж. Косбергенов
Publication year - 2022
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2022.04.52200.9768
Subject(s) - impurity , doping , silicon , nickel , diffusion , materials science , analytical chemistry (journal) , optoelectronics , chemistry , thermodynamics , metallurgy , physics , chromatography , organic chemistry
In this work, the parameters of silicon-based photocells doped with impurity nickel atoms by diffusion methods and during growth were compared. It was found that photocells doped with impurity nickel atoms during silicon growth have an improvement in parameters comparable to that obtained by the diffusion doping method. Additional heat treatment at T = 800 °C makes it possible to significantly improve their basic parameters.