Open AccessМеханизмы токопереноса в полупроводниковой структуре с пленкой пористого кремния, сформированной металл-стимулированным травлением
Author(s) -
Н.Н. Мельник,
В.В. Трегулов,
В.Г. Литвинов,
А.В. Ермачихин,
Е.П. Трусов,
Г.Н. Скопцова,
А.И. Иванов
Publication year - 2022
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2022.04.52197.9782
Subject(s) - materials science , barrier layer , band gap , raman spectroscopy , raman scattering , deep level transient spectroscopy , semiconductor , band bending , layer (electronics) , optoelectronics , nanotechnology , optics , silicon , physics
It is shown that during a porous Si film formation by metal-stimulated etching a barrier layer is formed on a monocrystal p-Si substrate. The rectifying properties of the semiconductor structure can be explained by the fixation of the Fermi level in the near-surface layer of porous Si due to a high concentration of electrically active defects (deep centers or traps). It causes to energy bands bending and the appearance of a potential barrier. The study of Raman scattering showed the absence of size effects and a change in the band gap in the porous Si film. Activation energies of deep centers by the temperature dependence of the current-voltage characteristics and deep level transient spectroscopy study were determined.