Open AccessТермоэлектрические и мемристивные особенности структур Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-/Sb-=SUB=-2-=/SUB=-S-=SUB=-3-=/SUB=-/Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=- и Ag/Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-/Ag
Author(s) -
А. Папикян,
С. Л. Арутюнян,
Н. Р. Агамалян,
Р. К. Овсепян,
А. Хачатурова,
С. И. Петросян,
Г. Бадалян,
Е. А. Кафадарян
Publication year - 2022
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2022.03.52126.9770
Subject(s) - seebeck coefficient , electrical resistivity and conductivity , thermoelectric effect , materials science , antimony , semiconductor , single crystal , analytical chemistry (journal) , thermal conductivity , atmospheric temperature range , condensed matter physics , optoelectronics , electrical engineering , chemistry , crystallography , physics , metallurgy , composite material , chromatography , engineering , thermodynamics , meteorology
Single-layer Sb2Te3 films and three-layer Sb2Te3/Sb2S3/Sb2Te3 structures are obtained by thermal vacuum deposition. Their thermoelectric characteristics have been investigated in a wide temperature range (5350 K). It is shown that the conductivity of Sb2Te3/Sb2S3/Sb2Te3 has a semiconductor behavior, the resistivity is an order of magnitude higher than the resistivity of the Sb2Te3 film; the Seebeck coefficient of Sb2Te3/Sb2S3/Sb2Te3 is 1.5 and 3 times higher than the Seebeck coefficient of the film and single-crystal Sb2Te3, respectively. The currentvoltage characteristics of the Sb2Te3 film exhibit memristive properties with unipolar resistive switching, whereas Sb2Te3/Sb2S3/Sb2Te3 can be considered as a memristor with a parallel connected capacitance.