Open AccessВлияние режима получения образцов и термообработки на локальную структуру халькогенидного полупроводника Ge-=SUB=-2-=/SUB=-Sb-=SUB=-2-=/SUB=-Te-=SUB=-5-=/SUB=-
Author(s) -
S. N. Garibova,
А. И. Исаев,
С. И. Мехтиева,
С.У. Атаева,
R. I. Alekperov
Publication year - 2022
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2022.03.52113.9744
Subject(s) - chalcogenide , raman spectroscopy , amorphous solid , materials science , crystallography , diffraction , phase (matter) , crystal (programming language) , evaporation , x ray crystallography , phase transition , impurity , crystal structure , condensed matter physics , chemistry , optics , thermodynamics , optoelectronics , programming language , physics , organic chemistry , computer science
Specifics of "amorphous state - crystal" phase transitions in dependence on the samples obtaining method and thermal processing, as well as changes in the structure and close range order in the arrangement of the atoms of Ge20Sb20.5Te51 chalcogenide semiconductors have been studied by the x-ray diffraction and Raman spectroscopy. It has been shown that Ge20Sb20.5Te51 films obtained by thermal evaporation on an unheated substrate are amorphous; after heat treatment at 220 and 400 °C, transform into a crystalline phase with a cubic and hexagonal structure. The chemical bonds and the main structural elements that form the matrix of the investigated objects, as well as the changes that occur in them during heat treatment, have been determined.