Open AccessВыращивание слоев GaAs-=SUB=-1-x-=/SUB=-Bi-=SUB=-x-=/SUB=- методом молекулярно-лучевой эпитаксии
Author(s) -
Б.Р. Семягин,
А. В. Колесников,
М.А. Путято,
В. В. Преображенский,
T. B. Popova,
V. I. Ushanov,
V. V. Chaldyshev
Publication year - 2022
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2022.03.52111.9764
Subject(s) - bismuth , molecular beam epitaxy , epitaxy , materials science , flux (metallurgy) , substrate (aquarium) , solid solution , gallium arsenide , crystallography , analytical chemistry (journal) , mineralogy , optoelectronics , chemistry , nanotechnology , metallurgy , layer (electronics) , geology , oceanography , chromatography
By molecular-beam epitaxy we have grown epitaxial layers of GaAs1-xBix solid solutions with a bismuth content of 0 < x < 0.02. Structural and optical properties of the layers were investigated. We determine the influence of the bismuth flux and substrate temperature on the bismuth incorporation into the growing layers.