Open AccessМДП транзистор на основе пленки PbSnTe : In с подзатворным диэлектриком Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=--=SUP=-*-=/SUP=-
Author(s) -
А. Е. Клімов,
В.А. Голяшов,
Д. В. Горшков,
Е.В. Матюшенко,
И. Г. Неизвестный,
G.I. Sidorov,
Н. С. Пащин,
S. P. Suprun,
O. E. Tereshchenko
Publication year - 2022
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2022.02.51969.30
Subject(s) - sawtooth wave , materials science , optoelectronics , transistor , molecular beam epitaxy , gate dielectric , voltage , dielectric , mist , threshold voltage , electrical engineering , epitaxy , layer (electronics) , nanotechnology , physics , computer science , meteorology , engineering , computer vision
Results on the creation and properties of transistor-type MIS structures (MIST) with an Al2O3 thin-film gate dielectric based on PbSnTe:In films obtained by molecular beam epitaxy are presented. The source-drain current-voltage characteristics (CVC) and gate characteristics of the MIST at Т = 4.2 К have been investigated. It is shown that in MIST based on PbSnTe:In films with n ~ 1017 cm-3 the modulation of the channel current reaches 7 – 8 % in the range of gate voltages – 10 V < Ugate < + 10 V. The features of the source-drain CVC and the gate characteristics for a pulsed and sawtooth variation of Ugate are considered.