МДП транзистор на основе пленки PbSnTe : In с подзатворным диэлектриком Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=--=SUP=-*-=/SUP=- | Zendy

А. Е. Клімов | Zendy; В.А. Голяшов | Zendy; Д. В. Горшков | Zendy; Е.В. Матюшенко | Zendy; И. Г. Неизвестный | Zendy; G.I. Sidorov | Zendy; Н. С. Пащин | Zendy; Sergey P. Suprun | Zendy; О. Е. Терещенко | Zendy

Open Access

МДП транзистор на основе пленки PbSnTe : In с подзатворным диэлектриком Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=--=SUP=-*-=/SUP=-

Author(s) -

А. Е. Клімов,

В.А. Голяшов,

Д. В. Горшков,

Е.В. Матюшенко,

И. Г. Неизвестный,

G.I. Sidorov,

Н. С. Пащин,

Sergey P. Suprun,

О. Е. Терещенко

Publication year - 2021

Publication title -

физика и техника полупроводников

Language(s) - English

Resource type - Journals

eISSN - 1726-7315

pISSN - 0015-3222

DOI - 10.21883/ftp.2022.02.51969.30

Subject(s) - sawtooth wave , materials science , optoelectronics , transistor , molecular beam epitaxy , gate dielectric , voltage , dielectric , mist , threshold voltage , electrical engineering , epitaxy , layer (electronics) , nanotechnology , physics , computer science , meteorology , engineering , computer vision

Results on the creation and properties of transistor-type MIS structures (MIST) with an Al2O3 thin-film gate dielectric based on PbSnTe:In films obtained by molecular beam epitaxy are presented. The source-drain current-voltage characteristics (CVC) and gate characteristics of the MIST at Т = 4.2 К have been investigated. It is shown that in MIST based on PbSnTe:In films with n ~ 1017 cm-3 the modulation of the channel current reaches 7 – 8 % in the range of gate voltages – 10 V < Ugate < + 10 V. The features of the source-drain CVC and the gate characteristics for a pulsed and sawtooth variation of Ugate are considered.

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