Open AccessВлияние наличия достаточно высокой концентрации фосфора на концентрационное распределение галлия в кремнии
Author(s) -
М.К. Бахадирханов,
Н.Ф. Зикриллаев,
С.Б. Исамов,
Х.С. Турекеев,
С.А. Валиев
Publication year - 2022
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2022.02.51962.9666
Subject(s) - gallium , silicon , molecule , solubility , doping , diffusion , materials science , chemistry , inorganic chemistry , chemical physics , thermodynamics , organic chemistry , optoelectronics , physics , metallurgy
It was found that the silicon preliminarily doped with a high concentration of phosphorus during the diffusion of gallium, there is a significant increase in the solubility of the gallium. The results obtained are explained by the interaction of gallium and phosphorus atoms, as a result of which quasi-neutral molecules [P+Ga-] are formed. It is assumed that the formation of such quasineutral molecules [P+Ga–] stimulates the formation of Si2GaP binary unit cells in the silicon lattice. It is shown that a sufficiently high concentration of such unit cells can lead to a significant change in the electrophysical parameters of silicon, i.e. the possibility of obtaining a new material based on silicon.