Open AccessВлияние никеля на время жизни носителей заряда в кремниевых солнечных элементах
Author(s) -
М.К. Бахадырханов,
З.Т. Кенжаев,
С.В. Ковешников,
К.С. Аюпов,
Е.Ж. Косбергенов
Publication year - 2022
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2022.01.51823.9642
Subject(s) - nickel , impurity , silicon , diffusion , doping , materials science , getter , charge carrier , chemical physics , recombination , oxygen , layer (electronics) , analytical chemistry (journal) , metallurgy , chemistry , optoelectronics , nanotechnology , thermodynamics , biochemistry , physics , organic chemistry , chromatography , gene
It has been shown experimentally that nickel clusters on the surface of a silicon sample contain a large amount of oxygen and recombination impurities - Cu, Fe, Cr, which shows good gettering properties of clusters. The optimum temperature of nickel diffusion into silicon is determined - Т=800-850 ° С. Doping with impurity nickel atoms with the formation of clusters makes it possible to increase the lifetime of nonequilibrium charge carriers in the base of a solar cell by up to 2 times, while the formation of a nickel-enriched region in the face layer is more efficient. It is shown that the effect of additional doping with nickel weakly depends on the sequence of the processes of nickel diffusion and the creation of a working p–n-junction.