Open AccessСканирующая туннельная микроскопия в халькогенидных термоэлектриках (Bi, Sb)-=SUB=-2-=/SUB=-(Te, Se, S)-=SUB=-3-=/SUB=-
Author(s) -
Л.Н. Лукьянова,
И. В. Макаренко,
О. А. Усов
Publication year - 2022
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2022.01.51806.22
Subject(s) - tellurium , scanning tunneling microscope , impurity , solid solution , materials science , thermoelectric effect , crystallography , surface (topology) , analytical chemistry (journal) , mineralogy , chemistry , nanotechnology , metallurgy , thermodynamics , geometry , physics , mathematics , organic chemistry , chromatography
The morphology studies of the interlayer surface (0001) were carried out by the method of scanning tunneling microscopy in the n–Bi1.6Sb0.4Te2.94Se0.06, n- Bi1.8Sb0.2Te2.82Se0.09S0.09, p-Bi0.8Sb1.2Te2.91Se0.09 and p-Bi0.7Sb1.3Te2.91Se0.09 solid solutions. On the surface (0001), impurity and native defects were found (vacancies of tellurium, antisite defects, adatoms), formed in the compositions due to substitutions of atoms in the Bi2Te3 sublattices. The average values of HM and the standard deviations of HS in height in the distribution of atoms on the surface are determined depending on the composition of the solid solution. The effect of detected defects on the thermoelectric properties of solid solutions has been established.