Open AccessОсобенности температурной стабильности сопротивления омических контактов к наногетероструктурам на основе GaAs и GaN
Author(s) -
В. И. Егоркин,
В.Е. Земляков,
A. V. Nezhentsev,
A. A. Zaitsev,
V. I. Garmash
Publication year - 2021
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2021.12.51716.9603
Subject(s) - ohmic contact , materials science , optoelectronics , substrate (aquarium) , contact resistance , thermal stability , resistor , transistor , silicon , electrical engineering , voltage , layer (electronics) , nanotechnology , chemistry , oceanography , organic chemistry , engineering , geology
The temperature stability of Ge/Au/Ni/Au ohmic contacts to GaAs nanoheterostructures and Ti/Al/Ni/Au ohmic contacts to GaN nanoheterostructures on silicon substrate was investigated. It has been established that optimization of the RTA process made it possible to obtain ohmic contacts with field emission current flow mechanism. The thermal stability of ohmic contacts for transistors and mesa resistors demonstrated the threshold behavior of the heat treatment temperature. The optimum process parameters for temperature stability and minimum contact resistance were defined.