Open AccessВысокоэффективные (EQE=37.5%) инфракрасные (850 нм) светодиоды с брэгговским и зеркальным отражателями
Author(s) -
А.В. Малевская,
Н.А. Калюжный,
С.А. Минтаиров,
Р.А. Салий,
Д.А. Малевский,
М.В. Нахимович,
В.Р. Ларионов,
П.В. Покровский,
М.З. Шварц,
В.М. Андреев
Publication year - 2021
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2021.12.51709.9711
Subject(s) - heterojunction , optoelectronics , quantum efficiency , diode , distributed bragg reflector , materials science , quantum well , reflector (photography) , light emitting diode , epitaxy , optics , layer (electronics) , physics , nanotechnology , laser , light source , wavelength
Developed and investigated are IR (850nm) light-emitting diodes based on AlGaAs/Ga(In)As heterostructures grown by the MOC-hydride epitaxy technique with multiple quantum wells in the active region and with a double optical reflector consisted of a multilayer Al0.9Ga0.1As/Al0.1Ga0.9As Bragg heterostructure and an Ag mirror layer. Light-emitting diodes with the external quantum efficiency (EQE) of 37.5% at current densities greater than 10A/cm2 have been fabricated.