Open AccessЗависимость люминесцентных свойств упорядоченных групп Ge(Si) наноостровков от параметров ямок на структурированной поверхности подложки "кремний на изоляторе"
Author(s) -
Ж. В. Смагина,
В.А. Зиновьев,
М.В. Степихова,
А.В. Перетокин,
Sergei Diakov,
Е.Е. Родякина,
А. В. Новиков,
А.В. Двуреченский
Publication year - 2021
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2021.12.51707.9722
Subject(s) - luminescence , materials science , quantum dot , substrate (aquarium) , optoelectronics , silicon , photonic crystal , photonics , signal (programming language) , silicon on insulator , crystal (programming language) , insulator (electricity) , nanotechnology , oceanography , computer science , programming language , geology
This paper presents the results of studies of the luminescence properties of structures with Ge(Si) quantum dots (QDs), in which a pit-patterned surface of silicon on insulator substrate served both for the spatial ordering of QDs and for the formation of a two-dimensional photonic crystal. It is shown that by choosing the parameters of pit-patterned substrate (the diameter of the pits and the period of their location), it is possible to provide a significant increase of intensity of the QD luminescence signal in the near-IR range. This enhancement is associated with interaction of spatially ordered QD emission with the modes of a photonic crystal formed by the pattern of pits. The effect of amplification of the luminescence signal persists up to room temperature.