Open AccessФотоэлектрические преобразователи узкополосного излучения на основе гетероструктур InGaAsP/InP
Author(s) -
Н.С. Потапович,
М.В. Нахимович,
В.П. Хвостиков
Publication year - 2021
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2021.11.51566.9688
Subject(s) - epitaxy , indium phosphide , heterojunction , materials science , optoelectronics , phosphide , photoelectric effect , indium , liquid phase , germanium , nanotechnology , gallium arsenide , metal , silicon , metallurgy , physics , layer (electronics) , thermodynamics
Utilizing performed research, photoelectric converters of narrow-band radiation (λ ≈ 1.0–1.3 µm) based on InGaAsP / InP heterostructures with an epitaxial p / n junction have been developed and created. Technological regimes that apply of for creating high-quality layers of quaternary InGaAsP solid solutions isoperiodic to indium phosphide in a wide range of compositions by liquid-phase epitaxy have been determined.