Open AccessИсследование методов текстурирования светодиодов на основе гетероструктур AlGaAs/GaAs
Author(s) -
А.В. Малевская,
Н.Д. Ильинская,
Н.А. Калюжный,
Д.А. Малевский,
Ю.М. Задиранов,
П.В. Покровский,
А.А. Блохин,
А.В. Андреева
Publication year - 2021
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2021.11.51565.9679
Subject(s) - electroluminescence , materials science , optoelectronics , light emitting diode , diode , wavelength , heterojunction , etching (microfabrication) , optics , isotropic etching , nanotechnology , physics , layer (electronics)
Investigations of methods for texturing the light-emitting surface of IR light-emitting diodes (LEDs) (wavelength 850 nm) based on AlGaAs/GaAs heterostructures with Bragg reflectors have been carried out. Developed were methods of liquid and plasma-chemical etching of solid solution for creating peaks (pyramids) of different form, 0.2–1.5 µm height. Estimation of the effect of texturing methods and also configuration of peaks on the light-emitting diode electroluminescence intensity has been performed. The increase of the electroluminescence intensity by 25% has been achieved.