Open AccessВлияние быстрого термического отжига на распределение атомов азота в GaAsN/GaAs
Author(s) -
А.А. Лазаренко,
К.Ю. Шубина,
Е.В. Никитина,
Е.В. Пирогов,
А.М. Мизеров,
М.С. Соболев
Publication year - 2021
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2021.11.51563.9697
Subject(s) - electronegativity , nitrogen , ternary operation , materials science , crystal structure , annealing (glass) , photoluminescence , crystallography , crystal (programming language) , lattice (music) , arsenic , analytical chemistry (journal) , chemistry , optoelectronics , metallurgy , physics , organic chemistry , chromatography , computer science , acoustics , programming language
The article investigates the effect of rapid thermal annealing of ternary GaAs1-xNx/GaAs solid solutions on the distribution of nitrogen atoms in the crystal lattice. The samples are studied by photoluminescence spectroscopy and high-resolution X-ray diffractometry. Due to the size and electronegativity mismatch of nitrogen and arsenic atoms, nitrogen is incorporated unevenly into the GaAs crystal lattice. Options of the nitrogen atoms arrangement in the GaAs crystal lattice before and after rapid thermal annealing are shown.