Open AccessМонополярное умножение горячих носителей заряда в полупроводниках A-=SUP=-III-=/SUP=-B-=SUP=-V-=/SUP=- в сильном электрическом поле и бесшумные лавинные фотодиоды (О б з о р)
Author(s) -
М.П. Михайлова,
А.П. Дмитриев,
И.А. Андреев,
Э.В. Иванов,
Е.В. Куницына,
Ю.П. Яковлев
Publication year - 2021
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2021.11.51552.9701
Subject(s) - impact ionization , ionization , electric field , semiconductor , atomic physics , multiple exciton generation , avalanche photodiode , electron , valence band , charge carrier , ionization energy , physics , materials science , band gap , condensed matter physics , optoelectronics , nuclear physics , optics , ion , quantum mechanics , detector
The results of theoretical and experimental studies of impact ionization processes and charge carrier heating in multi-valley A3B5 semiconductors at high electric field are presented and their relationship with the features of the band structure is discussed. A role of subsidiary L- and X-valleys, complex structure of the valence band and orientation dependence of the ionization coefficients are taken into account. A new approach to the choice of semiconductor materials with a large ratio of the ionization coefficients of holes and electrons to create the noiseless avalanche photodiodes due to monopolarity of hot charge carrier multiplication is proposed.