Open AccessСравнение гетероструктур А-=SUP=-III-=/SUP=-В-=SUP=-V-=/SUP=-, выращенных на платформах Ge/Si, Ge/SOI и GaAs
Author(s) -
А.А. Сушков,
Д.А. Павлов,
А.И. Андрианов,
В.Г. Шенгуров,
C.А. Денисов,
В.Ю. Чалков,
Р.Н. Крюков,
Н.В. Байдусь,
Д.В. Юрасов,
А.В. Рыков
Publication year - 2021
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2021.11.51550.47
Subject(s) - silicon on insulator , epitaxy , heterojunction , chemical vapor deposition , substrate (aquarium) , materials science , silicon , optoelectronics , molecular beam epitaxy , layer (electronics) , nanotechnology , oceanography , geology
AIIIBV/Ge/Si (001), AIIIBV/Ge/SOI (001), and AIIIBV/GaAs (001) heterostructures were formed and investigated. The Ge buffer layer was produced by the "hot wire" technique on a Si substrate (001) for the AIIIBV/Ge/Si structure. In the case of the AIIIBV/Ge/SOI, the Ge buffer layer was grown on the SOI (001) substrate by molecular beam epitaxy via two-stage growth. The growth of AIIIBV layers were performed by metalorganic chemical vapor deposition. It is shown that the Ge/SOI formed via two-stage growth allows the growth of AIIIBV layers that are not inferior in structural and optical quality to those formed on the Ge/Si.