Open AccessЛегированный кремнием GaSb, выращенный методом ГФЭМОС в широком диапазоне соотношений V/III
Author(s) -
Roy Levin,
A. S. Vlasov,
B. V. Pushnyĭ
Publication year - 2021
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2021.10.51447.9678
Subject(s) - epitaxy , photoluminescence , raman scattering , electrical resistivity and conductivity , materials science , diffraction , raman spectroscopy , analytical chemistry (journal) , doping , metal , chemistry , optics , optoelectronics , nanotechnology , metallurgy , layer (electronics) , physics , quantum mechanics , chromatography
Charachterization of Si-doped GaSb epitaxial layers grown by metal organic vapor phase epitaxy is presented. Samples are grown at constant SiH4 flow with a TMSb/TEGa ratio ranged from 1 to 50. X-ray diffraction, Raman scattering, photoluminescence, resistivity, free carrier concentration and their mobility are studied.