Open AccessВлияние дополнительной имплантации ионов кислорода на дислокационную люминесценцию кремния, содержащего кислородные преципитаты
Author(s) -
Н.А. Соболев,
А.Е. Калядин,
К.Ф. Штельмах,
Е.И. Шек
Publication year - 2021
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2021.10.51446.9694
Subject(s) - photoluminescence , dislocation , annealing (glass) , materials science , luminescence , silicon , getter , quenching (fluorescence) , wafer , analytical chemistry (journal) , ion , line (geometry) , atomic physics , chemistry , optoelectronics , metallurgy , optics , physics , fluorescence , composite material , geometry , organic chemistry , mathematics , chromatography
Dislocation-related photoluminescence is studied in unimplanted and implanted with oxygen ions silicon wafers after multistage heat treatment, used for the formation of internal getter in microelectronics, and final annealing at 1000°С in a chlorine-containing atmosphere. In unimplanted sample, the dislocation-related luminescence line D1 dominates and its intensity is more than one order of magnitude in comparison with another dislocation-related luminescence line D2. With increasing temperature, an intensity of the D1 line increases and then decreases. In implanted sample, the intensities of the D1 and D2 lines increase. For both the lines, temperature quenching of their intensities is observed only. The energies of quenching and increase of the intensities of dislocation-related photoluminescence lines are determined. Possible reasons of observed effects are discussed.