Open AccessЗамещение фосфора на поверхности InP(001) при отжиге в потоке мышьяка
Author(s) -
Д. В. Дмитриев,
Д.А. Колосовский,
E. V. Fedosenko,
A. I. Toropov,
К.С. Журавлев
Publication year - 2021
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2021.10.51437.36
Subject(s) - annealing (glass) , arsenic , materials science , dissolution , analytical chemistry (journal) , mineralogy , crystallography , metallurgy , chemical engineering , chemistry , environmental chemistry , engineering
We report experimental study of the transformation of the epi-ready InP(001) surface during annealing in an arsenic flux. Using the RHEED method, it was shown that an InP1−xAsx layer is formed on the surface. The amount of arsenic substitution for phosphorus at different annealing temperatures was determined, which is 7% at an annealing temperature of 480◦C and increases to 41% with an increase in the annealing temperature to 540◦C. The annealing time has little effect on the degree of substitution.