Open AccessАнализ влияния спейсерных слоев на нелинейные искажения вольт-амперных характеристик pHEMT на основе соединения GaAlAs/InGaAs
Author(s) -
Е. А. Тарасова,
C.В. Хазанова,
O. L. Golikov,
А. С. Пузанов,
С. В. Оболенский,
В.Е. Земляков
Publication year - 2021
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2021.10.51436.35
Subject(s) - high electron mobility transistor , nonlinear system , materials science , gallium arsenide , optoelectronics , doping , poisson's equation , layer (electronics) , condensed matter physics , mathematics , physics , mathematical analysis , quantum mechanics , nanotechnology , transistor , voltage
The work is devoted to the results of modeling of the parameters of pHEMT structures based on the AlGaAs / InGaAs / GaAs compound using a self-consistent solution of the Schrödinger and Poisson equation. Based on numerical calculations, a method for analyzing nonlinear distortions of transfer I-V characteristics is proposed. The influence of the spacer layers and the degree of doping of the δ-layer on the nonlinearity of the I – V characteristic is estimated.