Open AccessЭкспериментальные исследования модификации характеристик GaAs-структур с контактами Шоттки после воздействия быстрых нейтронов
Author(s) -
Е. В. Волкова,
А. Б. Логинов,
Б. А. Логинов,
Е. А. Тарасова,
А. С. Пузанов,
С. А. Королев,
Е.С. Семёновых,
S. V. Khazanova,
С. В. Оболенский
Publication year - 2021
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2021.10.51431.19
Subject(s) - electron , materials science , schottky diode , atomic force microscopy , optoelectronics , atomic physics , nanotechnology , physics , nuclear physics , diode
The electrophysical parameters and surface morphology of GaAs n/n- structures with Schottky contacts before and after neuron impact with an average energy of about 1 MeV were studied. Changes in the profiles of the concentration and mobility of electrons in the structures were determined by the C-V method measurements. The method of atomic force microscopy helped to find radiation defect clusters which appearing during impact. A complex approach to the determination of their parameters is proposed.