Open AccessМеждолинные процессы релаксации состояний мелких доноров в германии
Author(s) -
В.В. Цыпленков,
В.Н. Шастин
Publication year - 2021
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2021.09.51298.28
Subject(s) - excited state , phonon , germanium , condensed matter physics , shallow donor , impurity , relaxation (psychology) , crystal (programming language) , ground state , materials science , atomic physics , physics , silicon , doping , psychology , social psychology , quantum mechanics , computer science , metallurgy , programming language
The role of the intervalley processes of electron-phonon interaction in the relaxation of excited shallow arsenic donors in germanium is analyzed. The rates of intracenter inter-valley transitions with emission of TA phonons in ger-manium are calculated in dependence on the uniaxial compression stress along {111} crystallographic direction. It is shown that inter-valley transitions to the ground state of the donor with emission of phonons can play a significant role in the relaxation of excited impurities only upon uniaxial stress of the crystal, since at zero stress, there are no exact resonances between impurity transitions and intervalley phonons. There are also transitions from highly excited states lying in a narrow band of energies (~ 0.5 meV) under very bottom of the conduction band to the first excited state 1s(3)(Г5) (in stressed germanium crystal to 1s(3)(Г3) state). The average rate of these transitions is estimated at 0.3×109 s-1.