Open AccessОсобенности структурных напряжений в нитевидных нанокристаллах InGaN/GaN
Author(s) -
I. P. Soshnikov,
К.П. Котляр,
R. R. Reznik,
V. O. Gridchin,
В.В. Лендяшова,
А. В. Вершинин,
В.В. Лысак,
Д. А. Кириленко,
Н. А. Берт,
Г. Э. Цырлин
Publication year - 2021
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2021.09.51295.25
Subject(s) - heterojunction , materials science , molecular beam epitaxy , nanowire , core (optical fiber) , wedge (geometry) , shell (structure) , optoelectronics , electron microscope , morphology (biology) , gallium nitride , epitaxy , composite material , optics , layer (electronics) , physics , biology , genetics
The spontaneous synthesis of InGaN/GaN nanowires of core-shell heterostructure using molecular beam epitaxy isinvestigated in the work. It is shown by electron microscopy that a wedge-shaped crack can form at In content x=0.4 and 0.04 in the core and shell correspondent. Based on the model of internal structural stresses, a formula is proposed for estimation of the critical size and composition for the formation of cracks in NWs.The estimations and experimental data of morphology agree with each other.